VERTICAL CONDUCTIVE ELECTRONIC POWER DEVICE WITH REDUCED ON-RESISTANCE

The embodiment of the invention relates to a vertical conductive electronic power device with reduced on-resistance and a manufacturing process. The vertical conductive electronic power device includes a body, an epitaxial layer defined by a first surface and a second surface and having a semiconductor material, and a substrate. The epitaxial layer is defined by a first surface of the body and the substrate is defined by a second surface of the body. The epitaxial layer includes at least a first conductive region and a second conductive region, having a first doping type, and a plurality of insulated gate regions extending within the epitaxial layer. The substrate has at least one silicide region extending from the second surface of the body toward the epitaxial layer. 本公开的实施例涉及具有减少接通电阻的竖直传导电子功率器件及制造工艺。一种竖直传导电子功率器件，包括：主体，由第一表面和第二表面界定并且具有半导体材料的外延层，以及衬底。外延层由主体的第一表面界定，并且衬底由主体的第二表面界定。外延层至少包含第一传导区域和第二传导区域，具有第一掺杂类型，以及多个在外延层内延伸的绝缘栅极区域。衬底具有至少一个硅化物区域，该硅化物区域从主体的第二表面开始朝向外延层延伸。