Single-layer fluorinated graphene Schottky diode and preparation method and application thereof

The invention discloses a single-layer fluorinated graphene Schottky diode and a preparation method and application thereof. According to the method, a composite etching process is adopted, a deep groove is formed in a silicon substrate, the whole single-layer graphene diode device is made to suspen...

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Bibliographische Detailangaben

Hauptverfasser:	ZHU HONGXIN, ZHAO SHUAIYI, ZHOU YAOHONG, XIE SIQI, WANG HAIDONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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