Single-layer fluorinated graphene Schottky diode and preparation method and application thereof

The invention discloses a single-layer fluorinated graphene Schottky diode and a preparation method and application thereof. According to the method, a composite etching process is adopted, a deep groove is formed in a silicon substrate, the whole single-layer graphene diode device is made to suspend on the groove, and meanwhile a metal electrode is prepared on the single-layer graphene diode device; moreover, the graphene is fluorinated through xenon difluoride (XeF2) gas, an electron energy band gap is opened, a stable fluorocarbon atom covalent bond is formed in a suspended part, and a Schottky barrier is formed on an interface of a metal electrode and the fluorinated graphene to trigger a diode effect. By adopting the method, the influence of the semiconductor substrate on the thickness of the Schottky diode device and the negative influence of doping/impurities or defects of the semiconductor substrate on the performance of the Schottky diode device can be avoided, and the Schottky diode has the advantag