Regeneration processing method of substrate slice after SOI bonding process

The invention belongs to the technical field of recycling and processing of monocrystalline silicon polished wafers of integrated circuits, and particularly relates to a regeneration processing method of a substrate slice after an SOI bonding process. The method comprises the following steps: demoulding and cleaning a recovered SOI substrate slice, polishing the front surface of the substrate slice, cleaning the substrate slice for the first time, testing the flatness uniformity and thickness of the substrate slice, and cleaning the substrate slice for the second time. According to the regeneration processing method disclosed by the invention, the recovery of the substrate slice after the SOI bonding process is realized, so that the substrate slice reaches a substrate silicon slice with a high surface quality level again, the substrate slice can be circularly used for multiple times in the SOI bonding process, and the processing cost is far lower than the price of purchasing a new substrate silicon slice. 本发明