Method for manufacturing source-drain formation for flash eeprom

Method for manufacturing source-drain formation for flash eeprom

Method of avoiding electrical shorting on a substrate surface having pn contact from pn contact surface, where, during formation of the partition layer, a part of the pn contact surface protrudes by etching and afield oxide adhacent to the pn contact surface, including the method the following steps...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: RICHARD WILLIAM GREGOR
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Method of avoiding electrical shorting on a substrate surface having pn contact from pn contact surface, where, during formation of the partition layer, a part of the pn contact surface protrudes by etching and afield oxide adhacent to the pn contact surface, including the method the following steps: performance of a drain wash implant, with the pn contact surface protrusion under the field oxide, for removal of the protrusion.