FIELD EFFECT TRANSISTOR WITH A MULTILEVEL GATE ELECTRODE FOR INTEGRATION WITH A MULTILEVEL MEMORY DEVICE

A switching field effect transistor and the memory devices can be formed employing a same set of processing steps. An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures for memory devices and gate dielectric - channel structures for the field effect transistor can be simultaneously formed in a memory region and in a transistorregion, respectively. After replacement of the sacrificial material layers with electrically conductive layers, portions of the electrically conductive layers in a memory region are electrically isolated from one another to provide independently controlled control gate electrodes for the memory devices, while portions of the electrically conductive layers in the transistor region are electricallyshorted among one another to provide a single gate electrode for the switching field effect transistor. 开关场效应晶体管和存储器器件可以采用同一组工艺步骤来形成。在基板之上形成绝缘层和牺牲材料层的交替堆叠。用于存储器器件的存储器堆叠结构和用于场效应晶体管的栅极电介质-沟道结构可以同时分别形成在存储器区域和晶体管区域中。在用电导电层替换牺牲材料层