Semiconductor structure and formation method thereof
A semiconductor structure includes a first substrate having a front side and a back side and a second substrate having a front side and a back side, wherein the back side of the second substrate is attached to the back side of the first substrate. The structure further includes a device layer over t...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A semiconductor structure includes a first substrate having a front side and a back side and a second substrate having a front side and a back side, wherein the back side of the second substrate is attached to the back side of the first substrate. The structure further includes a device layer over the front side of the second substrate; a first conductor going through a semiconductor layer in the second substrate; and a conductive connection that connects the first conductor to a conductive feature in the device layer. Embodiments of the invention further relate to a method for forming the semiconductor structure.
一种半导体结构,包括具有正面和背面的第一衬底和具有正面和背面的第二衬底,其中,第二衬底的背面连接至第一衬底的背面。该结构还包括位于第二衬底的正面上方的器件层;穿过第二衬底中的半导体层的第一导体;以及将第一导体连接至器件层中的导电部件的导电连接。本申请的实施例还涉及形成半导体结构的方法。 |
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