Antiferromagnetic chromium nitride film and preparation method thereof

The invention provides a chromium nitride film and a preparation method thereof. The preparation method comprises the following steps: (1) preparing a polycrystalline chromium nitride target material: mixing chromium chloride powder and sodium amide powder, presintering, pressing into a blocky target material, and sintering again to obtain the polycrystalline chromium nitride target material; and (2) preparing a film: placing the polycrystalline chromium nitride target material in a vacuum cavity of pulse laser deposition equipment, and growing a chromium nitride film on a substrate by utilizing pulse laser deposition, wherein the obtained CrN thin film is high in crystallization quality and uniform in chemical component proportion. The method is easy to operate, high in repeatability and not affected by the external environment, and can be used for preparing chromium nitride films with different thicknesses and antiferromagnetic transition temperatures according to the requirements of devices. 本发明提供一种氮化铬薄膜及其