Method of manufacturing bump or pillar and semiconductor device

In a method of manufacturing a bump or pillar, a bump lower conductive layer is formed over a substrate, a first photoresist layer having a first opening and a second opening is formed over the bump lower conductive layer, a first conductive layer is formed in the first opening and the second opening to form a first low bump and a second low bump, the first photoresist layer is removed, a second photoresist layer having a third opening is formed over the second low bump, a second conductive layer is formed on the second low bump in the third opening to form a high bump having a height greater than that of the first low bump, and the second photoresist layer is removed. The embodiment of the invention also relates to a semiconductor device. 在制造凸块或柱的方法中，在衬底上方形成凸块下导电层，在凸块下导电层上方形成具有第一开口和第二开口的第一光刻胶层，在第一开口和第二开口中形成第一导电层以形成第一低凸块和第二低凸块，去除第一光刻胶层，在第二低凸块上方形成具有第三开口的第二光刻胶层，在第三开口中的第二低凸块上形成第二导电层以形成具有大于第一低凸块高的高度的高凸块，以及去除第二光刻胶层。本发明的实施例还涉及半导体器件。