P-TYPE IMPURITY DIFFUSION COMPOSITION AND PRODUCTION METHOD THEREOF, MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT USING DIFFUSION COMPOSITION, AND SOLAR BATTERY

The purpose of the present invention is to provide a p-type impurity diffusion composition which makes possible uniform dispersion on a semiconductor substrate and increase in the storage stability of a coating liquid. The p-type impurity diffusion composition contains (a) at least one resin selected from polyvinyl alcohol and polyethylene oxide, (b) a solvent, and (c) a compound containing a group 13 element, and is characterized in that the pH of the composition is 4-6.5, the solvent (b) contains (b-1) an organic solvent with a boiling point of 110-210 DEG C and (b-2) water, and the amount of water (b-2) is 10-50 mass% of the (b) solvent. 本发明的课题在于提供一种能够在半导体基板上均匀扩散和提高涂布液的保存稳定性的p型杂质扩散组合物。一种p型杂质扩散组合物，其包含(a)选自聚乙烯醇和聚环氧乙烷中的至少1种树脂、(b)溶剂以及(c)包含第13族元素的化合物，其特征在于，组合物的pH为4～6.5，(b)溶剂包含(b-1)沸点为110℃以上、210℃以下的有机溶剂和(b-2)水，(b-2)水的量为(b)溶剂中的10～50质量％。