Heterojunction semiconductor photoelectric detector and preparation method thereof
The invention discloses a heterojunction semiconductor photoelectric detector and a preparation method thereof, the photoelectric detector is prepared by using different GeSe stack structures, and the photoelectric detector comprises a substrate (1), a right electrode (2), a double-layer GeSe-AD sta...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a heterojunction semiconductor photoelectric detector and a preparation method thereof, the photoelectric detector is prepared by using different GeSe stack structures, and the photoelectric detector comprises a substrate (1), a right electrode (2), a double-layer GeSe-AD stack (3), a double-layer rotary GeSe-AB stack (4) and a left electrode (5); wherein the substrate (1) is the bottommost layer, the double-layer GeSe-AD stack (3), the right electrode (2) and the left electrode (5) are attached to the upper surface of the substrate (1), the right electrode (2) and the left electrode (5) are located on the two sides of the double-layer GeSe-AD stack (3), and the double-layer rotary GeSe-AB stack (4) is stacked on the double-layer GeSe-AD stack (3). According to the invention, a double-layer GeSe-AD stack is used as a donor, a double-layer rotary GeSe-AB stack is used as an acceptor, and the double-layer GeSe-AD stack and the double-layer rotary GeSe-AB stack are of different stack stru |
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