Method for manufacturing semiconductor device and etching solution

The invention relates to a method for manufacturing a semiconductor device and an etching solution. In a wet etching process to pattern a metal layer such as a p-metal work function layer over a dielectric layer such as a high-k gate dielectric layer, a selectivity of the wet etching solution between the metal layer and the dielectric layer is increased utilizing an inhibitor. The inhibitor includes such inhibitors as a phosphoric acid, a carboxylic acid, an amino acid, or a hydroxyl group. 本公开涉及半导体装置的制造方法与蚀刻溶液。在图案化介电层(如高介电常数的栅极介电层)上的金属层(如p型金属功函数层)的湿蚀刻工艺中，可采用抑制剂以增加湿蚀刻溶液对金属层与对介电层之间的选择性。这些抑制剂可包括磷酸、羧酸、胺基酸、或羟基。