THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS
The invention relates to a thin-film transistor substrate and a display apparatus including the same. The display apparatus includes a first thin-film transistor on a substrate. The first thin-film transistor includes a first semiconductor layer having a first channel area, a first source area, and...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a thin-film transistor substrate and a display apparatus including the same. The display apparatus includes a first thin-film transistor on a substrate. The first thin-film transistor includes a first semiconductor layer having a first channel area, a first source area, and a first drain area; a first lower gate electrode between the substrate and the first semiconductor layer; a first upper gate electrode on the first semiconductor layer and overlapping the first channel area; and a first electrode layer on the first upper gate electrode and electrically connected to at least one of the first source area and the first drain area. The first lower gate electrode overlaps the first channel area and the first drain area.
本公开涉及一种薄膜晶体管基板和一种包括薄膜晶体管基板的显示设备,所述显示设备包括位于基板上的第一薄膜晶体管。所述第一薄膜晶体管包括:第一半导体层,具有第一沟道区、第一源极区和第一漏极区;第一下栅电极,位于所述基板与所述第一半导体层之间;第一上栅电极,位于所述第一半导体层上并与所述第一沟道区交叠;以及第一电极层,位于所述第一上栅电极上并电连接到所述第一源极区和所述第一漏极区中的至少一者。所述第一下栅电极与所述第一沟道区和所述第一漏极区交叠。 |
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