SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Embodiments of the invention relate to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium. 本发明的实施例涉及半导体器件及其制造方法。半导体器件包括：栅电极；源极/漏极结构；下部接触件，接触栅电极或源极/漏极结构；以及上部接触件，设置在形成在层间介电层中的开口中并且与下部接触件直接接触。上部接触件与层间介电层直接接触而不插入导电阻挡层，以及上部接触件包括钌。