Method for forming semiconductor device

A method of forming a semiconductor device includes: removing a dummy gate from a semiconductor fin; depositing an adhesive layer and a filling metal layer on the semiconductor fin; and simultaneously etching the adhesive layer and the filler metal layer with a wet etching solution, the rate of etching the adhesive layer by the wet etching solution being greater than the rate of etching the filler metal layer, and reforming the filler metal. 半导体装置的形成方法包括：自半导体鳍状物上移除虚置栅极；沉积粘着层与填充金属层于半导体鳍状物上；以及以湿蚀刻溶液同时蚀刻粘着层与填充金属层，且湿蚀刻溶液蚀刻粘着层的速率大于蚀刻填充金属层的速率，并再成形填充金属。