Semiconductor device and method of manufacturing semiconductor device

In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer. The embodiment also discloses a semiconductor device and method of manufacturing semiconductor device. 在方法中，制备包括具有不同热膨胀系数的两种或更多种材料的结构，并且对该结构进行低温处理。在前述和以下实施例中的一个或多个中，该结构包括半导体晶圆，并且一个或多个层形成在该半导体晶圆上。本申请的实施例还涉及制造半导体器件和电子器件的方法。