SHOWERHEAD ASSEMBLY AND COMPONENTS

The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber si...

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Bibliographische Detailangaben
Hauptverfasser:	NANDWANA DINKAR, WHITE CARL LOUIS, HERBERT TERHORST, GNYANESH TRIVEDI, PETRO WILLIAM GEORGE, SHERO ERIC JAMES
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs. 本公开涉及淋喷头组件的实施方案，所述淋喷头组件可用于使用诸如原子层沉积(ALD)的工艺来沉积半导体层。所述淋喷头组件具有淋喷头，所述淋喷头具有增加的厚度，这有利地减小反应室尺寸并缩短循环时间。缩短循环时间可以提高吞吐量并降低成本。