Semiconductor device and forming method thereof

A semiconductor device according to an embodiment of the present invention includes a first transistor and a second transistor. The first transistor includes a plurality of first channel members and a first gate structure surrounding each of the plurality of first channel members. The second transis...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHONG ZHENGTING, CHENG GUANLUN, CAI QINGWEI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A semiconductor device according to an embodiment of the present invention includes a first transistor and a second transistor. The first transistor includes a plurality of first channel members and a first gate structure surrounding each of the plurality of first channel members. The second transistor includes a plurality of second channel members and a second gate structure disposed over the plurality of second channel members. Each of the plurality of first channel members has a first width and a first height less than the first width. Each of the plurality of second channel members has a second width and a second height greater than the second width. The embodiment of the invention also provides a method for forming the semiconductor device. 根据本发明实施例的半导体器件包括第一晶体管和第二晶体管。第一晶体管包括多个第一沟道构件和环绕多个第一沟道构件中的每一个的第一栅极结构。第二晶体管包括多个第二沟道构件和设置在多个第二沟道构件上方的第二栅极结构。多个第一沟道构件中的每一个具有第一宽度和小于第一宽度的第一高度。多个第二沟道构件中的每一个具有第二宽度和大于第二宽度的第二高度。本申请的实施例还提供一种形成半导体器件的方法。