SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

The embodiment of the invention provides a semiconductor device and a forming method thereof. The method includes the step of performing a series of etching processes to form a trench through the metal gate and the isolation region into the semiconductor substrate. The trench cuts through and separates the metal gate into a first metal gate and a second metal gate, and a recess is formed in the semiconductor substrate. Once the trench is formed, a dielectric plug material may be deposited into the trench to form a cut metal gate plug that is anchored in the recess of the semiconductor substrate and separates the first metal gate from the second metal gate. Thus, the anchored cut metal gate plug may provide high resistance to reduce leakage current in the semiconductor device during operation, and may improve voltage trigger performance of the semiconductor device. 本公开实施例提供一种半导体装置与其形成方法。方法包括进行一系列的蚀刻工艺，以形成沟槽穿过金属栅极与隔离区至半导体基板中。沟槽切穿并分开金属栅极成第一金属栅极与第二金属栅极，并形成凹陷于半导体基板中。一旦形成沟槽，可沉积介电插塞材料至沟槽中以形成切割金属栅极插塞，其锚定于半导体基板的凹陷中并分开