Foundational Supports within Integrated Assemblies

The invention relates to foundational supports within integrated assemblies. Some embodiments include an integrated assembly having a base (e.g., a monocrystalline silicon wafer), and having memory cells over the base and along channel-material-pillars. A conductive structure is between the memory cells and the base. The channel-material-pillars are coupled with the conductive structure. A foundational structure extends into the base and projects upwardly to a level above the conductive structure. The foundational structure locks the conductive structure to the base to provide foundational support to the conductive structure. 本申请案涉及集成组合件内的基础支撑件。一些实施例包含一种集成组合件，其具有基底(例如，单晶硅晶片)且具有在所述基底上面并沿着沟道材料柱的存储器单元。导电结构在所述存储器单元与所述基底之间。所述沟道材料柱与所述导电结构耦合。基础结构延伸到所述基底中且向上突出到所述导电结构上方的层级。所述基础结构将所述导电结构锁定到所述基底以对所述导电结构提供基础支撑。