Method and device for measuring beam quality factor of semiconductor laser

The invention discloses a method and device for measuring a beam quality factor of a semiconductor laser. The method comprises the steps of carrying twice focusing on a beam emitted by the semiconductor laser, forming two beam waists after the twice focusing, measuring the light intensity distributi...

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Bibliographische Detailangaben
Hauptverfasser: CAO YINHUA, LI JING, GUAN JIAOYANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a method and device for measuring a beam quality factor of a semiconductor laser. The method comprises the steps of carrying twice focusing on a beam emitted by the semiconductor laser, forming two beam waists after the twice focusing, measuring the light intensity distribution of the two beam waists through a light intensity detector, constructing a wigner distribution function according to all the measured light intensity distribution, and then substituting into a formula of the light beam quality factor according to the property of the wigner distribution function to calculate the light beam quality factor M2 of the semiconductor laser. According to the invention, the coherence of the semiconductor laser is considered, the beam quality of the semiconductor laser can be comprehensively and accurately described, and the design of the semiconductor laser and the improvement of the beam quality are facilitated. 本发明公开了一种半导体激光器光束质量因子的测量方法及装置,包括:对半导体激光器出射的光束进行两次聚焦,两次聚焦后形成两个光束束腰,通过光强探测器对两个光