Semiconductor structure and method of forming integrated circuit structure

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a substrate having a front side and a back side; a gate stack formed on the front side of the substrate and disposed on an active region of the substrate; a first source/drain part formed on the active region and disposed at an edge of the gate stack; a backside power rail formed on the back side of the substrate; and a backside contact part interposed between a backside power rail and the first source/drain part, and electrically connecting the backside power rail to the first source/drain part. The backside contact part further includes a first silicide layer on the back side of the substrate. Embodiments of the invention also relate to a method of forming an integrated circuit structure. 本公开提供了一种半导体结构的实施例。半导体结构包括：衬底，具有前侧和背侧；栅极堆叠件，形成在衬底的前侧上，并且设置在衬底的有源区上；第一源极/漏极部件，形成在有源区上并且设置在栅极堆叠件的边缘处；背侧电源轨，形成在衬底的背侧上；背侧接触部件，插入在背侧电源轨和第一源极/漏极部件之间，并且将背侧电源轨电连接到第一源极/漏极部件。背侧接触部件还包括设置在衬底的背侧上的第一硅化物层。本发明的实施例还涉及形成集成电路结构的方