Integrated circuit structure

One aspect of the present description is directed to an integrated circuit (IC) structure that includes a first layer and a second layer. The first layer includes a first metal structure and a second metal structure. The first metal structure is coupled to a first power source having a first voltage level and the second metal structure is coupled to a second power source having a second voltage level different from the first voltage level. A second layer is formed over the first layer. The second layer includes a first nano-sheet element coupled to the first metal structure and a second nano-sheet element adjacent to the first nano-sheet element. The second nanosheet element is coupled to the second metal structure. A distance between the first nanosheet element and the second nanosheet element is less than a minimum n-well to n-well spacing. 本描述的一态样是关于一种集成电路(integrated circuit,IC)结构，其包括第一层及第二层。第一层包括第一金属结构和第二金属结构，该第一金属结构耦接至具有第一电压位准的第一电源，该第二金属结构耦接至具有与第一电压位准不同的第二电压位准的第二电源。第二层形成在第一层之上。第二层包括第一纳米片材元件和第二纳米片材元件，第一纳米