Method for forming semiconductor device

The embodiment of the invention provides a forming method of a semiconductor device. When patterning an etch stop layer underlying the dielectric layer, the photoresist layer is used to protect the dielectric layer and conductive elements embedded in the dielectric layer. The photoresist layer may be further used to etch another dielectric layer below the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The underlayer may be used to protect conductive elements embedded in the dielectric layer from damage by a wet etchant used to etch the etch stop layer. 本公开实施例提供一种半导体装置的形成方法。当图案化位于介电层下方的蚀刻停止层时，光刻胶层用以保护介电层以及嵌入在介电层中的导电元件。光刻胶层可以进一步用于蚀刻在蚀刻停止层下方的另一个介电层，其中蚀刻下一个介电层会暴露出接触件，例如栅极接触件。底层可以用于保护嵌入介电层中的导电元件不受用于蚀刻蚀刻停止层的湿式蚀刻剂的破坏。