Novel DRAM structure and implementation method

The invention provides a novel DRAM structure and an implementation method. The novel DRAM structure comprises a longitudinal ring gate structure transistor and a trench capacitor, wherein the grid electrode of the longitudinal transistor can realize the single-side, double-side, three-side or four-side electric conduction in a self-defined manner, and has great flexibility. Meanwhile, a capacitor connected with the DRAM structure adopts a groove capacitor, the groove capacitor is isolated from the longitudinal structure transistor through another deep groove, and the groove is used for forming the transistor and forming the capacitor at the same time. The technological method is completely compatible with an existing CMOS technology, the whole structure can be manufactured in different P wells or N wells according to needs, and an NMOSFET or a PMOSFET is correspondingly formed. A calculation structure and a storage structure are directly connected, and the storage and calculation integration can be achieved.