ATOMIC LAYER ETCHING METHOD

The present invention relates to an atomic layer etching method for etching the surface of a substrate using an atomic layer etching apparatus. The present invention discloses an atomic layer etching method, comprising: a substrate preparation step (S10) of preparing a substrate (100) on a substrate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PARK SANG-JUN, KWON JUN HYUCK, CHUN JIN SUNG, KWANG SEON JIN, CHO BYUNGUL
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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