ATOMIC LAYER ETCHING METHOD

The present invention relates to an atomic layer etching method for etching the surface of a substrate using an atomic layer etching apparatus. The present invention discloses an atomic layer etching method, comprising: a substrate preparation step (S10) of preparing a substrate (100) on a substrate support frame; a modification step (S20) in which, after the substrate preparation step (S10), a modification gas containing a halogen gas other than HF is radicalized by a remote plasma generator bonded to the process chamber and supplied onto the substrate (100), thereby modifying the surface layer (110) of the substrate (100); a first purging step (S30) for purging the surface layer; a surface layer removal step (S40) of supplying a metal-containing precursor to the surface layer (110) to remove the surface layer (110) modified in the modification step (S20); and a second purge step (S50) in which the surface of the substrate (100) is purged. 本发明涉及利用原子层蚀刻装置蚀刻基板表面的原子层蚀刻方法。本发明公开了一种原子层蚀刻方法，包括：基板准备步骤(S10)，在基板支撑架上准备