CONFORMAL DAMAGE-FREE ENCAPSULATION OF CHALCOGENIDE MATERIALS

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant. 提供了用于在半导体衬底上的硫族化物材料上方形成封装双层的方法和设备。方法涉及形成双层，所述双层包含利用脉冲等离子体式等离子体增强化学气相沉积(PP-PECVD)直接在硫族化物材料沉积的阻挡层以及利用等离子体增强原子层沉积(PEALD)在阻挡层上方沉积的封装层。在多种实施方案中，所述阻挡层利用无卤素的硅前体形成，而通过PEALD所沉积的所述封装层利用含卤素的硅前体与无氢含氮反应物形成。