SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device. A detection circuit (110) includes a current source (120) and a resistor element (121) which are connected in series via a first node (N1) between a positive electrode and a negative electrode of a switching element (10a) which is turned on and off by a driving c...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | Disclosed is a semiconductor device. A detection circuit (110) includes a current source (120) and a resistor element (121) which are connected in series via a first node (N1) between a positive electrode and a negative electrode of a switching element (10a) which is turned on and off by a driving circuit. A voltage comparator (130) outputs a detection signal indicating a comparison result between an input DC voltage and the voltage of the first node (N1). The DC voltage (Vt) and the electric resistance value (R1) of the resistor element (121) are set in such manner that when an inter-electrode voltage between the positive electrode and the negative electrode becomes higher than a predefined determination voltage, the voltage of the first node is higher than the DC voltage. The detection circuit (110) and the voltage comparator (130) are mounted on the same integrated circuit constituting the semiconductor device (100A).
本发明涉及半导体装置。检测电路(110)具有在由驱动电路(150)进行通断的开关元件(10a)的正电极以及负电极之间经由第1节点(N1)而串联连接的电流源(120)以及电阻元件( |
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