Light emitting diode structure and manufacturing method thereof

The invention discloses a light emitting diode structure and a manufacturing method thereof. The light emitting diode structure includes a substrate and a plurality of LED units formed on the substrate. Each LED unit includes: a bonding layer formed on the substrate; a first doped semiconductor laye...

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Bibliographische Detailangaben
1. Verfasser: ZHUANG YONGZHANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a light emitting diode structure and a manufacturing method thereof. The light emitting diode structure includes a substrate and a plurality of LED units formed on the substrate. Each LED unit includes: a bonding layer formed on the substrate; a first doped semiconductor layer formed on the bonding layer; a second doped semiconductor layer formed on the first doped semiconductor layer; a passivation layer formed on the second doped semiconductor layer and a portion of the first doped semiconductor layer; and an electrode layer formed on a portion of the passivation layer and in contact with the second doped semiconductor layer. The plurality of LED units includes a first LED unit and a second LED unit adjacent to the first LED unit. The first doped semiconductor layer of the first LED unit extends horizontally to the first doped semiconductor layer of the second LED unit adjacent to the first LED unit, and the first LED unit and the second LED unit are individually operable LED units.