Gallium nitride device reliability testing device and testing method
The invention discloses a gallium nitride device reliability testing device and a testing method. The device comprises a load resistor, a load capacitor and a first semiconductor switching device, wherein one end of the load resistor is connected to a direct current power supply, and the other end o...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention discloses a gallium nitride device reliability testing device and a testing method. The device comprises a load resistor, a load capacitor and a first semiconductor switching device, wherein one end of the load resistor is connected to a direct current power supply, and the other end of the load resistor is connected to a drain electrode of the first semiconductor switching device; the source electrode of the first semiconductor switching device is respectively connected to the drain electrode of the gallium nitride device to be tested and one end of the load capacitor, the other end of the load capacitor is connected to the direct current power supply, and the source electrode of the gallium nitride device to be tested is grounded; the grid electrode of the first semiconductor switching device is connected to the first pulse generator, and the grid electrode of the gallium nitride device to be tested is connected to the second pulse generator. By adopting the device and the testing method provi |
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