METHOD FOR FABRICATING TFT ARRAY SUBSTRATE

The invention provides a method for fabricating tft array substrate. The method of fabricating a thin-film transistor (TFT) array substrate comprises following steps: forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming a semiconductor layer on the gate insulating layer, forming an ohmic contact layer on the semiconductor layer, and forming a source electrode and a drain electrode comprising a plurality of metal layer patterns on the ohmic contact layer, in which the semiconductor layer, the ohmic contact layer, the source electrode and the drain electrode are formed through a single mask process, and one of the plurality of metal layer patterns is etched through a polishing process to form the source electrode and the drain electrode. 本发明提供一种薄膜晶体管阵列基板的制造方法。薄膜晶体管阵列基板的制造方法，包括如下步骤：在基板上形成栅电极；在所述栅电极上形成栅极绝缘膜；在所述栅极绝缘膜上形成半导体层；在所述半导体层上形成欧姆接触层；以及在所述欧姆接触层上形成包括多个金属层图案的源电极和漏电极，所述多个金属层图案中的某一个通过研磨工序被蚀刻。