Method for detecting content of metal ions

The invention provides a method for detecting the content of metal ions, and the method comprises the following steps: S1, inputting a first substance which can chemically react with a substrate of a wafer at a position where the content of the metal ions of the wafer needs to be detected, wherein the first substance chemically reacts with the substrate to generate a second substance, and the second substance permeates into the substrate from the surface of the substrate; and S2, detecting the content of metal ions contained in the second substance. The second substance contains all metal ions on the surface of the substrate of the wafer and most metal ions in the substrate, so that the detected metal ion content not only comprises the metal ion content on the surface of the substrate, but also comprises the most metal ion content permeating into the substrate; therefore, the accuracy of metal ion content detection is improved. 本发明提供了一种检测金属离子含量的方法，所述方法包括以下步骤：S1、在晶圆需要检测金属离子含量的位置输入能够与晶圆的衬底发生化学反应的第一物质，其中，所述第一物质与