Aluminum trichloride trapping method

The invention discloses an aluminum trichloride trapping method which comprises the following steps of introducing aluminum trichloride gas into a trap for crystallization, when aluminum trichloride crystals grow to 2-10 mm, raising the temperature to 200-240 DEG C to enable the crystals to fall off from the wall of the trap, collecting the crystals, and repeating the steps of cooling for crystallization and raising the temperature to collect the crystals until the aluminum trichloride gas is completely collected. The method is simple in steps, the obtained aluminum trichloride crystal product is high in purity and low in impurity content, and the method is simple, convenient and suitable for industrial production. 本发明公开了一种三氯化铝的捕集方法，包括如下步骤：将三氯化铝气体通入捕集器中结晶，待三氯化铝晶体生长到2～10mm时，将温度升至200℃∽240℃使晶体从捕集器壁上脱落，收集晶体，再重复降温结晶，升温收集晶体的步骤，直至三氯化铝气体收集完毕。本发明方法步骤简单，得到的三氯化铝晶体产品的纯度高，杂质含量低，方法简便，适合工业化生产。