Self-powered nanometer ultraviolet detector based on transverse bridging pn junction

The invention discloses a self-powered nanometer ultraviolet detector based on a transverse bridging pn junction, and relates to the technical field of ultraviolet detection. According to the invention, an n-type ZnO nanowire is grown on one of the opposite side walls of two symmetrical ZnO seed layers, and one growing p-type ZnO nanowire forms transverse bridging to prepare a self-powered ultraviolet detector, so that the complex process of nanowire transfer is avoided, and the problem of how to control a nanowire of one conductive type to continuously grow on a nanowire of another conductive type in a single nanowire does not need to be considered; and the photosensitive area of the device is increased, and the response performance of the ultraviolet detector is optimized. 一种基于横向桥接pn结的自供电纳米紫外探测器，涉及紫外探测技术领域。本发明通过在两个对称的ZnO种子层相对的侧壁上一个生长n型ZnO纳米线，一个生长p型ZnO纳米线形成横向桥接来制备自供电紫外探测器以避免纳米线转移的复杂过程和不需要考虑单根纳米线中如何控制一种导电类型的纳米线在另一种导电类型的纳米线上继续生长的问题；并增大了器件的感光面积，优化了紫外探测器的响应性能。