SEMICONDUCTOR MEMORY DEVICE

The embodiment of the invention provides a high-quality semiconductor memory device. According to one embodiment, the semiconductor memory device includes first and second memory chips, first to third bonding wires, and a sealing resin. The first memory chip includes a first core circuit, first to third regions, and first to third pads. The second memory chip includes a second core circuit, fourth to sixth regions, and fourth to sixth pads. First to third bonding wires connect the first pad and the third pad, the fourth pad and the sixth pad, and the second pad and the fifth pad, respectively. The first to third regions are in contact with the sealing resin, and the second memory chip is laminated on the first memory chip. 本发明的实施方式提供一种高品质的半导体存储装置。本发明的实施方式的半导体存储装置包括第1及第2存储器芯片、第1～第3接合线及密封树脂。第1存储器芯片具备第1核心电路、第1～第3区域及第1～第3垫。第2存储器芯片具备第2核心电路、第4～第6区域及第4～第6垫。第1～第3接合线分别将第1垫与第3垫、第4垫与第6垫、第2垫与第5垫连接。第1～第3区域与密封树脂相接，第2存储器芯片是积层于第1存储器芯片之上。