Method for forming semiconductor structure and semiconductor structure

A method of forming a semiconductor structure includes providing a semiconductor substrate, and forming a passivation layer on the semiconductor substrate using an atomic layer vapor deposition apparatus, and the semiconductor structure includes the semiconductor substrate, the passivation layer, a back surface field layer, and an electrode layer. The back electric field layer is arranged on the passivation layer. The back electric field layer and the semiconductor substrate are located on the two opposite sides of the passivation layer respectively. The electrode layer is arranged on the back electric field layer. The electrode layer and the passivation layer are located on the two opposite sides of the back electric field layer respectively. According to the invention, the passivation layer with thin thickness, high uniformity and low interface defect density can be formed in a low-temperature environment, so that the thermal budget can be reduced, the possible damage to the semiconductor substrate can be a