Constant-voltage and constant-current protective gas device for indium phosphide single crystal growth and indium phosphide single crystal growth method

The invention discloses a constant-pressure and constant-current protective gas device for indium phosphide single crystal growth and a indium phosphide single crystal growth method, wherein the constant-pressure and constant-current shielding gas device comprises a VGF growth furnace, a gas storage tank, a high-pressure gas pump and a gas heating jacket; the VGF growth furnace comprises a high-pressure cavity, an upper cover is arranged at the top of the high-pressure cavity, a lower cover is arranged at the bottom of the high-pressure cavity, a cylindrical heater is arranged on the inner side of the high-pressure cavity, a gas outlet pipeline communicated with the heater is arranged on the upper cover, and a gas inlet pipeline communicated with the heater is arranged on the lower cover; a gas outlet pipeline on the upper cover is communicated with a gas inlet of the gas storage tank through a first pipeline, a gas outlet of the gas storage tank is communicated with a gas inlet of the high-pressure gas pump