Light emitting diode structure and manufacturing method thereof

The invention relates to an LED structure which comprises a substrate, a bonding layer, a first doping type semiconductor layer, a multiple quantum well layer (MQW layer), a second doping type semiconductor layer, a passivation layer and an electrode layer. The bonding layer is formed on the substrate, and the first doped semiconductor layer is formed on the bonding layer. The MQW layer is formed on the first doped semiconductor layer, and the second doped semiconductor layer is formed on the MQW layer. The second doped semiconductor layer includes an isolation material made by ion implantation, and a passivation layer is formed on the second doped semiconductor layer. The electrode layer is formed on the passivation layer and is in contact with a portion of the second doped semiconductor layer through a first opening in the passivation layer. 本发明涉及一种LED结构，包括基板、键合层、第一掺杂型半导体层、多重量子阱层(MQW层)、第二掺杂型半导体层、钝化层以及电极层。键合层形成在基板上，并且第一掺杂型半导体层形成在键合层上。MQW层形成在第一掺杂型半导体层上，第二掺杂型半导体层形成在MQW层上。第二掺杂型半导体层包括通过离子注入制成的隔离材料，并且钝化层形成在第二掺杂型半