METHOD FOR FORMING A COMMON ELECTRODE FOR A PLURALITY OF OPTOELECTRONIC DEVICES
A method for forming a common electrode 190 is provided, the method including: a) providing a support substrate 111 on which rest optoelectronic devices separated by trenches 170; b) forming a dielectric layer 130 on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thicknes...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A method for forming a common electrode 190 is provided, the method including: a) providing a support substrate 111 on which rest optoelectronic devices separated by trenches 170; b) forming a dielectric layer 130 on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks; c) etching a thickness E3 of the dielectric layer 130, so as to uncover the flanks at a first section 170a of the trenches; d) forming a metal layer filling the trenches and covering the front faces; and e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer 130, the metal layer remaining in the trenches 170 forming the common electrode 190.
本发明涉及一种形成多个光电器件的公共电极(190)的方法,该方法包括以下步骤:a)提供支撑基底(111),在该支撑基底上放置由沟槽(170)隔开的光电器件;b)在正面、侧面和沟槽的底部上形成介电层(130),在正面和侧面上形成的介电层的厚度分别为厚度E1和小于厚度E1的厚度E2;c)将介电层(130)蚀刻厚度E3,以露出沟槽的第一部分(170a)处的侧面;d)形成填充沟槽以及覆盖正面的金属层;e)对金属层进行机械化学抛光,抛光停止在介电 |
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