High electron mobility transistor

The present invention discloses a high electron mobility transistor which includes a buffer layer disposed on a substrate, where the buffer layer includes a first buffer layer and a second buffer layer, the first buffer layer detail includes a first layer of the first buffer layer disposed on the su...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG YUQI, CHEN YANXING, WANG YUREN, YANG ZONGMU, XU YOUMING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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