High electron mobility transistor
The present invention discloses a high electron mobility transistor which includes a buffer layer disposed on a substrate, where the buffer layer includes a first buffer layer and a second buffer layer, the first buffer layer detail includes a first layer of the first buffer layer disposed on the su...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The present invention discloses a high electron mobility transistor which includes a buffer layer disposed on a substrate, where the buffer layer includes a first buffer layer and a second buffer layer, the first buffer layer detail includes a first layer of the first buffer layer disposed on the substrate and a second layer of the first buffer layer disposed on the first layer of the first buffer layer, wherein a first layer of the first buffer layer comprises aluminum gallium nitride (AlyGa1-yN) and a second layer of the first buffer layer comprises aluminum gallium nitride (AlxGa1-xN). The second buffer layer comprises a first layer of the second buffer layer arranged on the first buffer layer and a second layer of the second buffer layer arranged on the first layer of the second buffer layer, the first layer of the second buffer layer comprises aluminum gallium nitride (AlwGa1-wN), and the second layer of the second buffer layer comprises aluminum gallium nitride (AlzGa1-zN) and x>z>y>w.
本发明公开一种高电子迁移率晶体管， |
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