GAS MIXTURE INCLUDING HYDROGEN FLUORIDE, ALCOHOL AND AN ADDITIVE FOR PREVENTING STICTION OF AND/OR REPAIRING HIGH ASPECT RATIO STRUCTURES

A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface...

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Bibliographische Detailangaben

Hauptverfasser:	MELAET GEROME MICHEL DOMINIQUE, MUI DAVID, LAVDOVSKY NATHAN, ZHU JI, DYLEWICZ RAFAL
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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