LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE

A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer...

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Hauptverfasser: KWAG DO-YOUNG, LEE YOON-SUK, KOO JA-MYEONG, JO YOUNG-KYONG, YANG SEON-A, WADA MASARU, KIM EUN-HYE, PARK SANG-MOO, OH MIN-SUB
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer and the second semiconductor layer and configured to provide light; a transparent electrode layer adjacent to an upper part of the second semiconductor layer; and a first electrode pad and a second electrode pad between the device substrate and the first semiconductor layer, the first electrode pad electronically connected with the first semiconductor layer and the second electrode pad electrically connected with the second semiconductor layer, wherein light provided by the active layer is irradiated to an outside in a direction from the active layer to the second semiconductor layer. 一种发光二极管(LED)包括:器件基板;第一半导体层,在所述器件基板上方并且掺杂有n型掺杂剂;第二半导体层,在所述第一半导体层上方并且掺杂有p型掺杂剂;有源层,在所述第一半导体层和所述第二半导体层之间并且被配置为提供光;透明电极层,与所述第二半导体层的上部相邻;以