Metal oxide semiconductor sensor and preparation method thereof

The invention provides a metal oxide semiconductor sensor and a preparation method thereof. The preparation method of the metal oxide semiconductor sensor comprises the steps of sequentially forming a gate electrode and a gate insulating layer on an underlayer substrate; forming an active island on...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	WANG SHUAIYI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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