Metal oxide semiconductor sensor and preparation method thereof

The invention provides a metal oxide semiconductor sensor and a preparation method thereof. The preparation method of the metal oxide semiconductor sensor comprises the steps of sequentially forming a gate electrode and a gate insulating layer on an underlayer substrate; forming an active island on the gate insulating layer, wherein the active island comprises a source, a drain and a metal oxide semiconductor pattern subjected to ion implantation; and forming a protective layer made of a piezoelectric material or a photosensitive material on the gate insulating layer on which the active island is formed. The metal oxide semiconductor sensor is high in sensitivity. 本发明提供一种金属氧化物半导体传感器及其制备方法。金属氧化物半导体传感器的制备方法，包括以下步骤：在衬底基板上依次形成栅极以及栅极绝缘层；在栅极绝缘层上形成有源岛，有源岛包括源极、漏极以及经过离子注入的金属氧化物半导体图形；在形成有有源岛的所述栅极绝缘层上形成由压电材料或光敏材料构成的保护层。本发明中金属氧化物半导体传感器的灵敏度高。