Preparation method of ultraviolet light-emitting diode chip with autologous photonic crystal structure

The invention relates to a preparation method of an ultraviolet light-emitting diode chip with an autologous photonic crystal structure. The preparation method comprises the following steps: (1), growing an epitaxial structure (110) on a primary substrate (100); (2), depositing a metal layer (120) on the upper surface of the top layer of the epitaxial structure (110); (3), depositing a bonding metal layer (130) on the metal layer (120); (4), bonding a secondary substrate (140) on the bonding metal layer (130); (5), removing the primary substrate (100) to expose a bottom layer interface of the epitaxial structure (110), and then etching the bottom layer interface to form a semiconductor layer connected with an electrode; (6), manufacturing an autologous photonic crystal structure formed by autologous GaN and air on the semiconductor layer by adopting a laser irradiation mode; and (7), depositing an electrode (150) on the light emitting surface of the semiconductor layer with the autologous photonic crystal str