Preparation method of polycrystalline silicon thin film passivation back electrode interdigital solar cell
The invention relates to the technical field of solar cells, and discloses a preparation method of a polycrystalline silicon film passivated back electrode interdigital solar cell. The mature methods, such as amorphous silicon film deposition, laser crystallization and isolation, ion implantation no...
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Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to the technical field of solar cells, and discloses a preparation method of a polycrystalline silicon film passivated back electrode interdigital solar cell. The mature methods, such as amorphous silicon film deposition, laser crystallization and isolation, ion implantation non-crystallization, selective etching, etc., are adapted to manufacture the polycrystalline silicon film passivated back electrode photovoltaic cell, wherein an ion implantation self-alignment partitioning technology can use a low-cost silk-screen printing technology. The mass production is completed based on an existing production line, the cost is relatively lower, and the development requirement of the photovoltaic industry is met.
本发明涉及太阳能电池技术领域,公开了一种多晶硅薄膜钝化背极插指型太阳能电池的制备方法,采用非晶硅薄膜沉积、激光做晶化和隔离、离子注入非晶化和选择性刻蚀等成熟方法来做多晶硅薄膜钝化的背极光伏电池制造,其中离子注入自对准分区技术可使用低成本的丝网印刷技术,基于现有生产线完成批量生产,成本相对低廉,适合光伏行业的发展需求。 |
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