Semiconductor element having contact plug connected to PMOS region grid structure

The invention discloses a semiconductor element having a contact plug connected with a PMOS region grid structure. The semiconductor element mainly comprises a substrate, the substrate comprises an NMOS region and a PMOS region, the grid structure extends on the substrate along a first direction from an NMSO region to the PMOS region, and a first contact plug is arranged on the grid structure. The first contact plug is biased to the PMOS region by an interface line separating the NMOS region and the PMOS region. The semiconductor element further includes a first source/drain region extending in a second direction over the NMOS regions on both sides of the gate structure and a second source/drain region extending in the second direction over the PMOS regions on both sides of the gate structure. 本发明公开一种一种具有连接PMOS区域栅极结构的接触插塞的半导体元件，该半导体元件主要包含一基底，该基底包含一NMOS区域以及一PMOS区域，一栅极结构由NMSO区域至PMOS区域沿着第一方向延伸于基底上以及一第一接触插塞设于栅极结构上，其中第一接触插塞由一分隔NMOS区域及PMOS区域的交界线偏向PMOS区域。半导体元件另包含一第一源极/漏极区域沿着第二方向延伸于栅极结构两侧的NMOS区域上以及一第二源极/漏极区域沿着第二方向延伸于