Thermoelectric temperature sensor

The invention discloses a thermoelectric temperature sensor, and belongs to the technical field of sensors. The thermoelectric temperature sensor comprises: a thermoelectric device made of a thermoelectric material of 200 [mu]V/DEG C or more, wherein the P-N even pair integration density of the ther...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUN BINWEI, ZHANG LILI, GAO PENG, WANG HE
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a thermoelectric temperature sensor, and belongs to the technical field of sensors. The thermoelectric temperature sensor comprises: a thermoelectric device made of a thermoelectric material of 200 [mu]V/DEG C or more, wherein the P-N even pair integration density of the thermoelectric device is not lower than 60 pairs of elements/cm , and each thermoelectric element realizes a full series structure through a conducting layer; ceramic plates arranged on the upper and lower surfaces of the thermoelectric device; a hot end soaking plate bonded on the upper ceramic plate; a cold end soaking plate bonded on the lower ceramic plate; and a heat insulation structure arranged on the side wall of the thermoelectric device. According to the technical scheme, the high-density integrated-density thermoelectric device is made of the thermoelectric material with the Seebeck coefficient of 200 [mu]mV/DEG C or more, soaking plates are designed at the cold end and the hot end of the device so that the